Low contact resistivity ohmic contacts to 6H-silicon carbide

The resistivity of ohmic contacts to N/sup +/ 6H-silicon carbide substrates, with Ti as the contact material, was studied using the circular TLM structure. Two dimensional numerical simulation of the circular TLM structures were performed to analyze the current distribution and its influence on the extraction procedure. A contact resistivity of 2/spl times/10/sup -5/ ohm-cm/sup 2/ was obtained without any high temperature anneal by using an N/sup +/ surface implant layer. This contact resistivity is an order of magnitude lower than any of the previously reported values for n-type 6H-silicon carbide.<
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