ULSI technology development by predictive simulations

Integrated semiconductor process and device simulation that is built on physically sound principles and powerful numerical algorithms should be capable of predicting most aspects of IC performance in minutes to hours, based only on process recipes as input. A system is discussed which we believe approaches this ideal for technologies into the 0.1 /spl mu/m regime. Examples cited include intrinsic MOSFET/bipolar modeling, parasitic characterization, novel device analysis and automated design optimization.<
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