Symmetric CMOS in fully-depleted silicon-on-insulator using P/sup +/-polycrystalline SiGe gate electrodes

In this work, polycrystalline SiGe gate electrodes have been implemented on fully-depleted silicon-on-insulator with light channel doping. Symmetric NMOS and PMOS operation is achieved, with threshold voltages in the range of 0.4-0.6 V. The devices exhibit good short-channel behavior and near-ideal subthreshold slope. CMOS ring oscillators with enhancement-mode NMOS and PMOS have been fabricated, exhibiting propagation delays comparable to previously reported values for fully-depleted SOI.<
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