High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser diodes

Experimental results on tensile-strained Al/sub 0.3/Ga/sub 0.66/As-GaAs/sub 0.78/P/sub 0.22/ separate-confinement-heterostructure single-quantum-well (SCH-SQW) laser diodes are reported. Threshold current density as low as 260 A/cm
²
for broad-stripe lasers with a cavity length of 1500 μm has been observed. Broad-stripe devices have operated cw at room temperature with output power as high as 620 mW/facet. Ridge-waveguide lasers have exhibited cw threshold currents as low as 13.5 mA and output power of 90 mW. The output of the tensile-strained lasers is TM polarized.