Two-dimensional energy-dependent substrate current models for deep submicron MOSFETs

Substrate current model based on the post-processing 1-D hydrodynamic model attached to drift-diffusion simulators has proven to be efficient and accurate for predicting substrate current for contemporary submicron MOSFETs. However, as devices shrink into the deep submicron regime, the self-consistent 2-D HD model will be increasingly needed to predict not only the substrate current but also to accurately determine the location of hot-carrier generation in evaluating the reliability of competing device designs.<
>