Incorporating full band-structure effects in the spherical harmonics expansion of the Boltzmann transport equation

Band-structure effects are incorporated in the framework of the Spherical-Harmonic Expansion (SHE) approximation of the Boltzmann Transport Equation (BTE) for electrons in silicon. The density of states (DOS) and the group velocity (GV) are modeled as energy-dependent functions obtained from the full-band system. Scattering parameters are tuned by fitting experimental and Monte Carlo data.<
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