Influence of heat flux on the accuracy of hydrodynamic models for ultra-short Si MOSFETs

The modeling accuracy of the generalized hydrodynamic model for ultra-short MOSFETs with L/sub eff/=0.1 /spl mu/m is examined using a consistent Monte Carlo model as reference. It is shown that with a proper modeling of heat flux the generalized hydrodynamic model is still sufficiently accurate even for such small devices.<
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