Non-ideal contacts-Schottky diode soft-breakdown and hybrid diode with contact over pn-junction

We applied our model of non-ideal metal-semiconductor contacts to contacts on material of various low and high dopings and on pn-junctions. Respective simulation results are presented in the paper. First, the apparent barrier lowering, which is due to tunneling, is shown as a function of doping and contact voltage drop. The soft breakdown of a Schottky diode under reverse bias is simulated. Finally we investigate how the potential in a hybrid diode is affected where the pn-junction is covered by a metal contact.<
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