Effects of a new trench-isolated transistor using sidewall gates

In this structure, the sidewall of the trench is used as an extra channel region. The sidewall gate electrode, which covers the sharp convex corner of the trench, increases the electric field at the channel edge. The advantages of this transistor are excellent cutoff characteristics, a small substrate bias effect, and high reliability (compared with the LOCOS-isolated transistor). The sidewall gate along the channel edge plays an important role in increasing gate controllability and decreasing the electric field at the drain.<
>