New high power diode model with both forward and reverse recovery

Over the last few years, many papers have been published in the area of diode modelling. However, satisfactory representation of both forward and reverse recovery phenomena for high power diodes has yet to be published. This paper presents the development of a new high power diode model, based on the combination of two different strategies that produce forward recovery voltage and reverse recovery current separately. The model is verified by comparing the SABER simulation results against those produced by an experimental rig for a high power diode at turn-on and turn-off.<
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