Fully-depleted submicron SOI for radiation hardened applications

Using fully-depleted technology, the Loral 256K SOI SRAM has demonstrated under worst case SEU and prompt dose testing an LET threshold of at least 80 MeV cm/sup /spl and/2//mg, and a prompt dose rate upset level of greater then 4E10 rad(Si)/s, respectively, without design hardening. Total dose testing on transistors fabricated on enhanced bond and etchback SOI substrates indicates over 100 krad(Si) capability. Together, these results represent the first description of a fully depleted SOI technology for all radiation-hardened applications except extreme total dose.<
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