Co/sup 60/ gamma ray and electron displacement damage studies of semiconductors

A general method for relating Co/sup 60/ gamma ray and monoenergetic electron beam displacement damage is presented. The approach is based on the concept of effective "displacement damage dose", which is analogous to ideas used to study ionizing radiation effects. The response to electron damage of p-type gallium arsenide and indium phosphide solar cells, as previously reported for p-type silicon solar cells, is proportional to the square of the nonionizing energy loss.<
>