The electrical properties of sub-5-nm oxynitride dielectrics prepared in a nitric oxide ambient using rapid thermal processing

Ultrathin (<5 nm) dielectric films have been grown on <100> silicon using rapid thermal processing (RTP) in a nitric oxide (NO) ambient. Interface state density, charge trapping properties, and interface state generation during Fowler-Nordheim electron injection have been investigated. The films grown in NO have excellent electrical properties. These properties are explained in terms of a much stronger and large number of Si-N bonds in both the bulk of the dielectric films and at the Si-SiO/sub 2/ interface region. The leakage currents are at least three orders of magnitude lower than other reported results for similar thicknesses. The dielectric films grown in NO ambient are viewed as promising technology for ultrathin dielectrics.<
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