Channel length dependence of random telegraph signal in sub-micron MOSFET's

The channel length dependence of the random telegraph signal (RTS) in a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been investigated both theoretically and experimentally. The key result is that, for a given surface potential, the RTS amplitude is proportional to 1/L/sup 2/, where L is the channel length, provided the contribution of the mobility fluctuation is much smaller than that of the carrier number fluctuation. A special test structure, consisting of a series combination of MOSFET's, is used to experimentally determine this channel length dependence, and good agreement with our simple theory is obtained.<
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