Model for hysteresis and kink behavior of MOS transistors operating at 4.2 K

The hysteresis and kink characteristics of MOS transistors (MOSTs) operating at 4.2 K have been investigated. The response time of a MOST depends exponentially on the inverse of the drain voltage. A model is proposed that explains both the transient and kink behavior of the devices. It is based on the forced formation of the depletion layer caused by the avalanche-generated substrate current. The model is compared with previous models published in the literature.<
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