Gate current 1/f noise in GaAs MESFET's

Gate current 1/f has been investigated on commercial GaAs MESFETs. It is found that devices with slight differences in drain current noise can have quite a different type of I/sub g/ versus V/sub ds/ and V/sub gs/ and even greater differences in the gate current noise. The 1/f part in the spectrum of the gate current is a better diagnostic tool for characterizing the quality of the junction than the drain current noise. A model that is based on a Schottky barrier shunted by edge currents is proposed to explain the experimental results.<
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