A super low noise V-band AlInAs/InGaAs HEMT processed by selective wet gate recess etching

A 0.15 /spl mu/m T-shaped gate AlInAs/InGaAs high electron mobility transistor (HEMT) with excellent RF performances has been developed using a selective wet gate recess etching. An extremely low minimum noise figure (Fmin) of 0.9 dB with an associated gain (Ga) of 7.0 dB has been achieved at 60 GHz for a SiON-passivated device. This is the lowest value of Fmin ever reported for AlInAs/InGaAs HEMT with a passivation film.<
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