Predicted small-signal gain of the HBT distributed amplifier

Recent interest in the heterojunction bipolar transistor (HBT) distributed amplifier (DA) has led to a need for an analytical expression predicting its small-signal gain. It has been found that standard equations based on the MESFET DA are inaccurate when applied to the HBT DA. This paper describes an expression which has been developed to give better agreement with simulated results.<
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