High temperature characteristics of strained InGaAs/lnGaAsP quantum well lasers lattice matched to GaAs

The effect of high temperature on the threshold current density and the gain of In/sub x/Ga/sub 1-x/As/InGaAsP (E/sub g/=1.6 eV) QW lasers lattice matched to GaAs is investigated theoretically. These results are also compared with those of In/sub x/Ga/sub 1-x/As/GaAs QW lasers. It is found that better performance can be achieved in InGaAs/InGaAsP lasers compared to InGaAs/GaAs lasers at high temperature. This is due to the fact that the temperature dependence of the threshold carrier density for InGaAs/InGaAsP lasers is weaker than that for InGaAs/GaAs lasers. The calculated characteristic temperature is in good agreement with reported experimental results.<
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