RF performance of SiC MESFET's on high resistivity substrates

State-of-the art SiC MESFET's showing a record high f/sub max/ of 26 GHz and RF gain of 8.5 dB at 10 GHz are described in this paper. These results were obtained by using high-resistivity SiC substrates for the first time to minimize substrate parasitics. The fabrication and characterization of these devices are discussed.<
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