Vertical-type amorphous-silicon MOSFET ICs

The performance of vertical-type amorphous-silicon (a-Si) MOSFETs has been improved significantly by using native silicon dioxide as the gate insulator. The maximum field-effect mobility was 1.2 cm/sup 2//V-s. An E/E-type inverter and a seven-stage ring oscillator have been fabricated by integrating the vertical-type a-Si MOSFET. The minimum propagation delay time was 95 ns/stage. The characteristics of a flip-flop circuit are also described.<
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