Fabrication and magnetic studies of (Co, Zn)-doped /spl gamma/-Fe/sub 2/O/sub 3/ thin films

A fabrication process for the sputtered (Co, Zn)-doped /spl gamma/-Fe/sub 2/O/sub 3/ thin films with quite a short reduction time (10 minutes) at temperature between 350-370/spl deg/C and with oxidation time about 20 minutes at temperature between 310-330/spl deg/C has been established. It has been observed that, with a few percent of Co and Zn content, the Zn dopant has the effect of producing higher saturation magnetization and better thermal stability of coercivity, as well as better suppressing grain growth effect during the heat treatments when these films are compared to /spl gamma/-Fe/sub 2/O/sub 3/ thin films doped with Co only.<
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