Extracting 1/f noise coefficients for BJT's

We present a method for extracting the BJT SPICE noise model parameters AF and KF based on a general analysis of the small-signal equivalent circuit and the role of the internal BJT noise sources. The analysis is valid even for transistors with poor current gain and large base-collector conductance, for which the output noise characteristics may not be dominated by base flicker and shot noise. The method consists of interpreting the measured 1/f corner frequency versus DC current data in terms of the BJT's internal noisy small signal equivalent circuit. Measured data is presented for an implanted-emitter and two polysilicon-emitter bipolar technologies.<
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