Ultra-high speed HBT sine ROM for direct digital synthesis application

This paper presents the design and development of a read-only memory (ROM) with 300 ps access time implemented in AlGaAs/GaAs HBT technology. Both a generic 4 K ROM and a compact DDS ROM architecture that minimizes storage requirement are adopted for the look-up table design. Power dissipation for both circuits has been minimized by using of capacitively-coupled active pull-down circuitry.<
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