Monolithic Ka-band FET receiver chips

Integrated SSB low noise receivers have been developed using 0.25 um PHEMT mushroom gate process. The chip includes low noise amplifiers, miniature image noise filter, and FET downconverters to achieve less than a 4 dB SSB NF. These circuits can be used in SSB communication systems or in monopulse radar receiver applications where they will reduce channel to channel tracking errors, test, and assembly costs compared to a three chip assembly of LNA, filter, and downconverter.<
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