Computationally efficient and accurate capacitance model for the GaAs MESFET for microwave nonlinear circuit design

A new equation for simulating the bias dependency of the gate-source and gate-drain capacitances of the GaAs MESFET is presented and compared with existing techniques. It provides increased accuracy for microwave circuit design applications and substantial savings in CPU execution speed over existing techniques. The new empirical relation is applied successfully to a wide range of silicon and GaAs devices.<
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