A 0.5 mu m isolation technology using advanced polysilicon pad LOCOS (APPL)

A novel, simple LOCOS (local oxidation of silicon) technology has been developed for 0.5- mu m MOS devices. Using the technology, channel-stop implantation and deep-channel implantation are performed simultaneously after field oxidation. These self-aligned implantations eliminate the lateral diffusion of the channel stop impurities, thus suppressing narrow-width effects. Moreover, the body effects is also minimized because of the optimized impurity profile in the channel region.<
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