A new high sensitivity photo-transistor for area image sensors

A novel MOS phototransistor with a high optical gain, called a double-gate floating-surface phototransistor, has been proposed and fabricated. The phototransistor realizes a 0.8-electron RMS noise equivalent signal over a 3.58-MHz-wide band. It achieves a dynamic range of 75 dB with an amplification characteristic suitable for TV-camera application. It is concluded that an ultra-high-sensitivity image sensor can be realized with this device.<
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