Tapered thickness MQW waveguide BH MQW lasers

We propose and demonstrate a novel 1.3 μm InGaAsP/InGaAsP multiple-quantum-well (MQW) BH Fabry-Perot laser diode monolithically integrated with a MQW tapered thickness waveguide. A selective area growth (SAG) technique is used to fabricate the tapered thickness waveguide with low absorption loss and to integrate it with the MQW gain region with a high coupling efficiency. We achieve very narrow vertical and lateral far-field FWHM of 11.8/spl deg/ and 8.0/spl deg/, with low threshold current of 19 mA and high slope efficiency of 0.25 mW/mA.