An n-channel BICFET in the GaAs/AlGaAs material system

An n-channel BICFET (bipolar inversion channel FET) and an HFET (heterojunction FET) have been fabricated for the first time by MBE (molecular-beam epitaxy) growth with the charge sheet located on the wide-bandgap side of the heterointerface. This implementation is most desirable because of the potential for low resistance, high gain, and a temperature-stable structure. The HFET associated with the BICFET has a positive threshold, indicating that no channel exists in the equilibrium state.<
>