Determination of source and drain series resistances of ultra-short gate-length MODFETs

A practical method to evaluate the parasitic source and drain series resistances of modulation-doped FETs is presented. The method is based on a modified gate-probe technique that uses the gate current crowding phenomenon. It is suitable for complex heterostructure devices since the carrier transport mechanism and physical structure properties around the gate region need not conform to ideal models.<
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