Hot carrier degradation of n-channel MOSFETs characterized by a gated-diode measurement technique

The gated-diode measurement technique characterizes the physical damage induced in n-channel MOSFETs during hot-carrier stress. The results show that the gate oxide in the channel region is not affected by hot-carrier stress. The most severe damage is located in the gate oxide above the drain-gate overlap region. Furthermore, the measurements show that the density of generation centers in the substrate is increased after hot-carrier stress.<
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