Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD

This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH/sub 4/ in Helium by PECVD (plasma enhanced chemical vapor deposition) technique. Rates up to ten times (5.5 /spl mu/m/h) that of the standard technique are obtained. We have investigated the electrical characteristics -depletion voltage, residual space charge density- of the helium diluted material and compared them to that of the standard material. Finally, the response of detectors, fabricated from both materials, to 5.5 MeV alpha particles are compared.<
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