A unified method for modeling semiconductor power devices

A unified method for modeling semiconductor power devices has been developed. The novelty of the method is a generalized description of the lightly doped region which is a common feature of all power devices. The charge carrier distribution in this region is calculated with a fast numerical algorithm. Depending on this carrier distribution the voltage across the low doped zone is calculated with analytical equations. This so called hybrid-description can be adjusted to the physical behavior of all power devices. By combining the hybrid-model with an analytical description of the remaining high doped regions the complete power device is described. The method has been applied to the power diode, the power bipolar transistor, and the IGBT. The developed circuit models have been implemented in a commercial circuit-simulator. The simulation results have been compared with measurements.<
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