Thermal oxidation of 6H-silicon carbide at enhanced growth rates

A new oxidation scheme with enhanced growth rate for silicon carbide is reported in this paper. It is based upon the formation of a thick amorphous layer created using high dose ion implantation followed by thermal oxidation. The oxide thickness has been demonstrated to be larger in the amorphized region when compared to the unimplanted (monocrystalline SiC) region. The breakdown field strength of this oxide (8 MV/cm) is comparable to that obtained for thermal oxide grown on silicon. C-V measurements indicate the presence of large negative charge in the oxide grown using this method.<
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