The correlation between gate current and substrate current in 0.1 μm NMOSFET's

The correlation between gate and substrate currents in NMOSFET's with effective channel length, L/sub eff/, down to 0.1 μm is investigated within the general framework of the lucky-electron model. It Is found that the correlation coefficient, /spl Phi/b//spl Phi//sub i/, decreases with decreasing L/sub eff/ in the 0.1 μm regime, where /spl Phi//sub b/ is the effective Si-SiO
₂
barrier height for channel hot-electrons, and /spl Phi//sub i/ is the effective threshold potential for impact ionization. Furthermore, this effect becomes stronger in NMOSFET's with shorter L/sub eff/. These experimental results suggest the need for further investigation on specific assumptions in the lucky-electron model to understand hot-electron behavior and impact ionization-mechanisms in 0.1 μm-scale NMOSFET's.