A vertical submicron polysilicon thin-film transistor using a low temperature process

This letter presents a submicron (0.5 μ) vertical N-channel MOS thin-film transistor (TFT) fabricated in Polycrystalline Si using a simple low temperature process (/spl les/600/spl deg/C). The channel length is determined by the thickness of an SiO
₂
film. As a result, submicron vertical polysilicon TFT's can be fabricated without submicron lithographic equipment that is not yet available for large area active matrix liquid crystal display (AMLCD) applications. The device has a dynamic range of greater than five orders of magnitude after hydrogenation.