Characteristics of trench j-MOS power transistors

The fabrication of trench j-MOS transistors in bulk silicon, so that they can be operated in either a three-terminal or a four-terminal mode, is presented. When the transistors are operated in accumulation mode, the specific on-resistance is 0.8 m Omega -cm/sup 2/. In the four-terminal mode a high transconductance, 290 S/cm/sup 2/, is achieved by manipulating the inversion layer charge. In the three-terminal mode, mixed pentode-triode drain characteristics are exhibited. Response times are comparable to those of a junction FET. These properties make the trench j-MOS transistor attractive for power switching.<
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