A stable indium-phosphide diffused junction field-effect transistor with high gain and low leakage

The fabrication and performance of a JFET which is made by diffusing zinc into an epitaxial channel of indium phosphide grown by MOCVD on a semi-insulating InP(Fe) substrate are presented. The total gate length is 2.4 mu m. At 0-V gate bias the transconductance is 140 mS/mm, the gate-source capacitance is 3.0 pF/mm, and the output conductance is less than 0.5 mS/mm. At -2-V gate bias the leakage from gate to source is 4 nA/mm. The drift in drain-source current is less than +or-1% after 10/sup 6/ s under continual DC bias.<
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