Gain-bandwidth product of AlGaSb avalanche photodiodes analyzed by using equivalent multiplication region method

An analysis presented for an AlGaSb diode in which it was approximated by a p-i-n diode with an equivalent multiplication region having a length of one-eighth of the whole depletion region and was combined with R.B. Emmon's p-i-n avalanche photodiode analysis (1967). A relationship between the gain-bandwidth product and the carrier concentration is derived, and it is shown to agree well with the experimental data.<
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