Improvement of hardness of MOS capacitors to electron-beam irradiation and hot-electron injection by ultradry oxidation of silicon

The sensitivity to electron-beam-induced damage and to hot-electron-induced damage of metal/SiO/sub 2//Si capacitors has been improved by using ultradry oxide. The ultradry oxide was grown in a double-walled quartz furnace in which water concentration was reduced to less than 1 p.p.m. The interface trap generation in ultradry MOS capacitors due to electron beams is nearly one order of magnitude smaller than that in conventional dry MOS capacitors. Interface trap generation in ultradry MOS capacitors caused by hot electrons is half of that in dry MOS capacitors.<
>