A detailed hardness evaluation of HCMOS devices

Experimental conditions have been established to achieve Radiation Verification Tests on non-hardened ICs. A realistic and conservative hardness evaluation of these devices has been carried out using a low dose rate irradiation and a 168 h/100/spl deg/C annealing procedure. Most of the device types satisfied the conditions for a 20 krad application but a "super rebound" exceeding the maximum values ever seen appeared on one device type.<
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