Heavy ion sensitivity of a SRAM in SOI bulk-like technology

The sensitivity to heavy ions of a thick SOI technology compatible with bulk design rules is studied in this paper. A model is built, relying on two basic phenomena gathered in this thick SOI technology: the collection of the charge injected by the incident ion and its amplification by the parasitic bipolar. Theoretical results are then compared with experimental ones. The oblique incidence induces a sharp increase of the sensitivity of the device.<
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