Methodology for submicron device model development

Two-dimensional (2-D) device analysis is coupled into a new model development environment. An improved set of 2-D analytical boundary conditions for submicron MOS technology is developed through using exact information from numerical simulations. In addition to the accurate modeling of 2-D potential boundary conditions, the model provides a framework for further enhancements in the context of technology evolution. Specifically, the methodology is general and can be extended to a variety of technologically complex submicron structures, for example, source/drain tip implants (LDD-type devices) and a variety of other blanket and locally implanted structures.<
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