First demonstration of high-power GaInP/GaAs HBT MMIC power amplifier with 9.9 W output power at X-band

We report for the first time the large-signal power performance of a MMIC amplifier based on GaInP/GaAs HBT's. A output power of 9.9 W and power-added efficiency of more than 30% are measured at X-band. These results compare favorably with those measured from AlGaAs/GaAs HBT's, demonstrating that GaInP/GaAs HBT's are suitable for microwave power applications.<
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