On the frequency-dependent capacitance of the nitride-oxide-nitride capacitor

We study the frequency response of the metal-insulator-metal (MIM) capacitor that has recently been evaluated as a voltage-programmable link (VPL). The nitride-oxide-nitride (NON) insulator, comprises a sandwich of a nearly stoichiometric silicon dioxide interposed between two like layers of silicon-rich silicon nitride. A unique frequency dependence displayed by the present structure has its origin in the rather leaky nature of the nitride component. A significant capacitance reduction at high operating frequencies is realized, leading to increased device speed.<
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