Correlation between substrate hot electron energy and homogeneous degradation in n-MOSFET's

Experimental data of substrate hot-electron induced degradation in n-MOSFET's is analyzed by means of a simulation tool that uses an efficient nonlocal algorithm to calculate the electron energy distribution at the Si-SiO/sub 2/ interface. Comparison between the bias dependence of the damage due to small injected charges and that of the hot-carrier energy distribution suggests that electrons with energy below the Si-SiO/sub 2/ barrier play a dominant role in the early stages of device degradation.<
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