A model relating wearout to breakdown in thin oxides

A model has been developed relating wearout to breakdown in thin oxides. Wearout has been described in terms of trap generation inside of the oxide during high voltage stressing prior to breakdown. Breakdown occurred locally when the local density of traps exceeded a critical value and the product of the electric field and the higher leakage currents through the traps exceeded a critical energy density. The measurement techniques needed for determining the density of high-voltage stress generated traps have been described along with the method for coupling the wearout measurements to breakdown distributions. The average trap density immediately prior to breakdown was measured to be of the order of low-10/sup 19//cm/sup 3/ in 10 nm thick oxides fabricated on p-type substrates stressed with negative gate voltages. The model has been used to describe several effects observed during measurements of time-dependent-dielectric-breakdown distributions. The area dependence of breakdown distributions, the differences in the breakdown distributions during constant current and constant voltage stressing, and the multi-modal distributions often observed were simulated using the model. The model contained the provision for incorporation of weak spots in the oxide.<
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