dv/dt induced latching failure in 1200 V/400 A halfbridge IGBT modules

A reliability investigation of 1200 V/400 A halfbridge IGBT modules by switching test is reported in this paper. Latch up failure was observed in the un-tested part of IGBT modules, which resulted in catastrophic craterlike melting pits in emitter bonding pads and then the tested part of IGBT modules was destroyed by very high power dissipation. Fast turn on due to a small gate resistance caused a high dv/dt (about 4000 Vspl mu/s) which triggered the latching failure.<
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