Modification and characterization of insulator-semiconductor interface in a.c. thin film electroluminescent display devices

A technique for modifying the characteristics of a.c. thin film electroluminescent (ACTFEL) display devices by incorporating a thin (1-5 nm) aluminum layer at the phosphor-dielectric interfaces was investigated. This modification resulted in a reduction in the threshold voltage. The change in the effective density of states and the energy levels of these interface states was estimated by calculating the luminescence-time characterization of the modified and the control ACTFEL devices and matching them against the measured characteristics.<
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